Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .28nC @ 10V
Input Capacitance (Ciss.1462pF @ 25V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Part StatusActive
Power Dissipation (Max)3.2W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs11.5mOhm @ 8.7A, 10V
Series-
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.3V @ 250?A
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