Attributes

Key Value
Base Product NumberFDD663
CategoryDiscrete Semiconductor .
Current - Continuous Dr.21A (Tc)
Drain to Source Voltage.35 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .63 nC @ 10 V
Input Capacitance (Ciss.2370 pF @ 20 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)68W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs11.6mOhm @ 14A, 10V
SeriesAutomotive, AEC-Q101, P.
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id3V @ 250?A
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