Attributes

Key Value
Base Product NumberRJK5012
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Ta)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .29 nC @ 10 V
Input Capacitance (Ciss.1100 pF @ 25 V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-83
Part StatusActive
Power Dissipation (Max)100W (Tc)
Rds On (Max) @ Id, Vgs620mOhm @ 6A, 10V
Series-
Supplier Device PackageLDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id-
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev