Rohm Semiconductor R6515KNX3C16

mpnR6515KNX3C16
brandname: Rohm Semiconductor
manufacturername: Rohm Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	15A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	27.5 nC @ 10 V
Input Capacitance (Ciss.	1050 pF @ 25 V
Mfr	Rohm Semiconductor
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	161W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	315mOhm @ 6.5A, 10V
Series	-
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 430?A