Toshiba Semiconductor and Storage TK170V65Z,LQ

mpnTK170V65Z,LQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK170V65
Category	Discrete Semiconductor .
Current - Continuous Dr.	18A (Ta)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	29 nC @ 10 V
Input Capacitance (Ciss.	1635 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package	Tape & Reel (TR)
Package / Case	4-VSFN Exposed Pad
Power Dissipation (Max)	150W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	170mOhm @ 9A, 10V
Series	DTMOSVI
Supplier Device Package	4-DFN-EP (8x8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 730?A