Attributes

Key Value
Base Product NumberTLP781
CategoryDiscrete Semiconductor .
Current - Continuous Dr.38A (Tc)
Drain to Source Voltage.150V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .22nC @ 10V
Input Capacitance (Ciss.2200pF @ 75V
MfrToshiba Semiconductor a.
Mounting TypeSurface Mount
Operating Temperature150?C
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Part StatusActive
Power Dissipation (Max)1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs15.4mOhm @ 19A, 10V
SeriesU-MOSVIII-H
Supplier Device Package8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
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