Attributes

Key Value
Base Product NumberSIHP28
CategoryDiscrete Semiconductor .
Current - Continuous Dr.28A (Tc)
DescriptionMOSFET N-CH 600V 28A TO.
Detailed DescriptionN-Channel 600 V 28A (Tc.
Digi-Key Part NumberSIHP28N60EF-GE3-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .120 nC @ 10 V
Input Capacitance (Ciss.2714 pF @ 100 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SIHP28N60EF-GE3
Manufacturer Standard L.69 Weeks
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)250W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs123mOhm @ 14A, 10V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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