Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.14A (Ta), 56A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20 nC @ 5 V
Input Capacitance (Ciss.1425 pF @ 15 V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Power Dissipation (Max)2.8W (Ta), 60W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs9.5mOhm @ 14A, 10V
SeriesPowerTrench?
Supplier Device PackageI-PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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