Infineon Technologies BUZ30A H

mpnBUZ30A H
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Categories	Discrete Semiconductor.
Current - Continuous Dr.	21A (Tc)
Drain to Source Voltage.	200V
Drive Voltage (Max Rds .	10V
Expanded Description	N-Channel 200V 21A (Tc.
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	-
Input Capacitance (Ciss.	1900pF @ 25V
Lead Free Status / RoHS.	Lead free / RoHS Compl.
Manufacturer	Infineon Technologies
Manufacturer Part Number	BUZ30A H
Manufacturer Standard L.	12 Weeks
Moisture Sensitivity Le.	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	TO-220-3
Packaging	Tube
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	130 mOhm @ 13.5A, 10V
Series	SIPMOS?
Standard Package	500