Attributes

Key Value
Base Product NumberIPI60R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Tc)
DescriptionMOSFET N-CH 600V 11A TO.
Detailed DescriptionN-Channel 600 V 11A (Tc.
Digi-Key Part NumberIPI60R299CPXKSA1-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .29 nC @ 10 V
Input Capacitance (Ciss.1100 pF @ 100 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPI60R299CPXKSA1
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)96W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs299mOhm @ 6.6A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 440?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev