Infineon Technologies IRF3709ZL

mpnIRF3709ZL
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	87A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	26 nC @ 4.5 V
Input Capacitance (Ciss.	2130 pF @ 15 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Power Dissipation (Max)	79W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	6.3mOhm @ 21A, 10V
Series	HEXFET?
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.25V @ 250?A