Infineon Technologies SPD04N50C3ATMA1

mpnSPD04N50C3ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	SPD04N50
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.5A (Tc)
Drain to Source Voltage.	500V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	22nC @ 10V
Input Capacitance (Ciss.	470pF @ 25V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Not For New Designs
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	950mOhm @ 2.8A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO252-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.9V @ 200?A