Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.15A
Drain to Source Voltage.800V
FET FeatureStandard
FET Type4 N-Channel (H-Bridge)
Gate Charge (Qg) (Max) .91nC @ 10V
Input Capacitance (Ciss.2254pF @ 25V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP4
Part StatusActive
Power - Max156W
Rds On (Max) @ Id, Vgs290mOhm @ 7.5A, 10V
Series-
Supplier Device PackageSP4
Vgs(th) (Max) @ Id3.9V @ 1mA
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