Attributes

Key Value
Base Product NumberAPT38N60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.38A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .112 nC @ 10 V
Input Capacitance (Ciss.2826 pF @ 25 V
MfrMicrosemi Corporation
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)278W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs99mOhm @ 18A, 10V
SeriesCoolMOS?
Supplier Device PackageD3Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 1.2mA
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