Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.40A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .700 nC @ 10 V
Input Capacitance (Ciss.14000 pF @ 25 V
MfrMicrosemi Corporation
Mounting TypeChassis Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTray
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max)690W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs180mOhm @ 20A, 10V
SeriesPOWER MOS IV?
Supplier Device PackageISOTOP?
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 5mA
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