Attributes

Key Value
Base Product NumberAPTM50
CategoryDiscrete Semiconductor .
Configuration2 N-Channel (Dual)
Current - Continuous Dr.90A
Drain to Source Voltage.500V
FET Feature-
Gate Charge (Qg) (Max) .246nC @ 10V
Input Capacitance (Ciss.11200pF @ 25V
MfrMicrosemi Corporation
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP4
Power - Max694W
Product StatusObsolete
Rds On (Max) @ Id, Vgs45mOhm @ 45A, 10V
Series-
Supplier Device PackageSP4
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 5mA
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