NXP USA Inc. PHB222NQ04LT,118

mpnPHB222NQ04LT,118
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.5V, 10V
Drain to Source Voltage.	93.6nC @ 5V
Drive Voltage (Max Rds .	2.8mOhm @ 25A, 10V
FET Feature	300W (Tc)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	7880pF @ 25V
Mfr	NXP USA Inc.
Mounting Type	D2PAK
Operating Temperature	Surface Mount
Package	Obsolete
Package / Case	40V
Part Status	N-Channel
Power Dissipation (Max)	-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs	2V @ 1mA
Series	Tape & Reel (TR)
Supplier Device Package	TO-263-3, D?Pak (2 Lead.
Technology	75A (Tc)
Vgs (Max)	-
Vgs(th) (Max) @ Id	?15V