Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .0.9 nC @ 4.5 V
Input Capacitance (Ciss.75 pF @ 15 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case3-XFDFN
Part StatusLast Time Buy
Power Dissipation (Max)178mW (Ta)
Rds On (Max) @ Id, Vgs155mOhm @ 300mA, 4.5V
Series-
Supplier Device PackageSOT-883 (XDFN3) (1x0.6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.1V @ 10?A
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