Attributes

Key Value
Base Product NumberNVTFS5820
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .28 nC @ 10 V
Input Capacitance (Ciss.1462 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Power Dissipation (Max)3.2W (Ta), 21W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs11.5mOhm @ 8.7A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.3V @ 250?A
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