Attributes

Key Value
Base Product NumberNVTFWS016
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Ta), 32A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.9 nC @ 10 V
Input Capacitance (Ciss.489 pF @ 30 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Power Dissipation (Max)2.5W (Ta), 36W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs16.3mOhm @ 5A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 25?A
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