Renesas Electronics America Inc NP35N04YLG-E1-AY

mpnNP35N04YLG-E1-AY
brandname: Renesas Electronics America Inc
manufacturername: Renesas Electronics America Inc

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	35A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	51 nC @ 10 V
Input Capacitance (Ciss.	2850 pF @ 25 V
Mfr	Renesas Electronics Ame.
Mounting Type	Surface Mount
Operating Temperature	175?C
Package	Tube
Package / Case	8-SMD, Flat Lead Expose.
Part Status	Active
Power Dissipation (Max)	1W (Ta), 77W (Tc)
Rds On (Max) @ Id, Vgs	9.7mOhm @ 17.5A, 10V
Series	-
Supplier Device Package	8-HSON
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A