Rohm Semiconductor R6035KNZ1C9

mpnR6035KNZ1C9
brandname: Rohm Semiconductor
manufacturername: Rohm Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	35A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	72 nC @ 10 V
Input Capacitance (Ciss.	3000 pF @ 25 V
Mfr	Rohm Semiconductor
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Part Status	Obsolete
Power Dissipation (Max)	379W (Tc)
Rds On (Max) @ Id, Vgs	102mOhm @ 18.1A, 10V
Series	-
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 1mA