Rohm Semiconductor RF4E110BNTR

B0131VQ8GY

Mosfet 4.5V Drive Nch Mosfet

Mosfet 4.5V Drive Nch Mosfetzoom

Attributes

Key Value
Base Product NumberRF4E110
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta)
Drain to Source Voltage.30 V, 30V
Drive Voltage (Max Rds .4.5V, 10V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .24 nC @ 10 V, 24nC @ 10V
Input Capacitance (Ciss.1200 pF @ 15 V, 1200pF .
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerUDFN
Part StatusActive
Power Dissipation (Max)2W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs11.1mOhm @ 11A, 10V
Series-
Supplier Device PackageHUML2020L8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18172040.217791100ROHM Semiconductor0.21779 @ 100
Digi-Key49671710.420211271Rohm Semiconductor0.4202 @ 100
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