Attributes

Key Value
Base Product NumberSUG90090
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .129 nC @ 10 V
Input Capacitance (Ciss.5220 pF @ 100 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-247-3
Part StatusActive
Power Dissipation (Max)395W (Tc)
Rds On (Max) @ Id, Vgs9.5mOhm @ 20A, 10V
SeriesThunderFET?
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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