Infineon Technologies IMZ120R090M1HXKSA1

mpnIMZ120R090M1HXKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IMZ120
Category	Discrete Semiconductor .
Current - Continuous Dr.	26A (Tc)
Drain to Source Voltage.	1200 V
Drive Voltage (Max Rds .	15V, 18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	21 nC @ 18 V
Input Capacitance (Ciss.	707 pF @ 800 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-247-4
Part Status	Active
Power Dissipation (Max)	115W (Tc)
Rds On (Max) @ Id, Vgs	117mOhm @ 8.5A, 18V
Series	CoolSiC?
Supplier Device Package	PG-TO247-4-1
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -7V
Vgs(th) (Max) @ Id	5.7V @ 3.7mA