Attributes

Key Value
Base Product NumberIPG20N
CategoryDiscrete Semiconductor .
Configuration2 N-Channel (Dual)
Current - Continuous Dr.20A
Drain to Source Voltage.55V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) .23nC @ 10V
Input Capacitance (Ciss.1730pF @ 25V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Power - Max30W
Product StatusObsolete
Rds On (Max) @ Id, Vgs35mOhm @ 11A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TDSON-8-4
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 15?A
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