Attributes

Key Value
Base Product NumberIPP114N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
DescriptionMOSFET N-CH 30V 30A TO2.
Detailed DescriptionN-Channel 30 V 30A (Tc).
Digi-Key Part NumberIPP114N03LGIN-ND
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14 nC @ 10 V
Input Capacitance (Ciss.1500 pF @ 15 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPP114N03L G
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)38W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs11.4mOhm @ 30A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.2V @ 250?A
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