Attributes

Key Value
Base Product NumberMSCSM170
CategoryDiscrete Semiconductor .
Current - Continuous Dr.181A (Tc)
Drain to Source Voltage.1700V (1.7kV)
FET FeatureSilicon Carbide (SiC)
FET Type2 N-Channel (Dual) Comm.
Gate Charge (Qg) (Max) .534nC @ 20V
Input Capacitance (Ciss.9900pF @ 1000V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 175?C (TJ)
PackageBulk
Package / CaseModule
Power - Max862W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs15mOhm @ 90A, 20V
Series-
Supplier Device PackageSP3F
Vgs(th) (Max) @ Id3.2V @ 7.5mA
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