ON Semiconductor NDD60N360U1-1G

mpnNDD60N360U1-1G
brandname: ON Semiconductor
manufacturername: ON Semiconductor

Attributes

Key	Value
Current - Continuous Dr.	11A (Tc)
Drain to Source Voltage.	600V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	26nC @ 10V
Input Capacitance (Ciss.	790pF @ 50V
Mfr	ON Semiconductor
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-251-3 Short Leads, I.
Part Status	Obsolete
Power Dissipation (Max)	114W (Tc)
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Series	-
Supplier Device Package	I-PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?25V
Vgs(th) (Max) @ Id	4V @ 250?A