Attributes

Key Value
Base Product NumberNTMTS0D
CategoryDiscrete Semiconductor .
Current - Continuous Dr.533A (Tc)
Drain to Source Voltage.40V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .187nC @ 10V
Input Capacitance (Ciss.11800pF @ 20V
MfrON Semiconductor
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Part StatusActive
Power Dissipation (Max)5W
Rds On (Max) @ Id, Vgs0.48mOhm @ 50A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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