Attributes

Key Value
Base Product NumberRJK1001
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Ta)
Drain to Source Voltage.100V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .147nC @ 10V
Input Capacitance (Ciss.10000pF @ 10V
MfrRenesas Electronics Ame.
Mounting TypeThrough Hole
Operating Temperature150?C
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusActive
Power Dissipation (Max)30W (Ta)
Rds On (Max) @ Id, Vgs5.5mOhm @ 40A, 10V
Series-
Supplier Device PackageTO-220FPA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
prev