Attributes

Key Value
Base Product NumberSTLD125
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120A (Tc)
Drain to Source Voltage.40V
Drive Voltage (Max Rds .6.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .91nC @ 10V
Input Capacitance (Ciss.5600pF @ 10V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Part StatusActive
Power Dissipation (Max)130W (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 75A, 10V
SeriesSTripFET? F6
Supplier Device PackagePowerFlat? (5x6) Dual S.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
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