Attributes

Key Value
@Ic (A)100m
@VCE (test) (V)1.0
C(ob) (F)4p
CaseTO92
Collector Capacitance (.4 pF
Derate (Amb) (W/?C)2.9m
Forward Current Transfe.40
hfe12
Ic Max. (A)200m
Icbo Max. @Vcb Max. (A).40u
ManufacturerTexas Instruments
Max. Operating Junction.125 ?C
Max. PD (W)360m
Maximum Collector Curre.0.2 A
Maximum Collector Power.0.25 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.20 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.N/A
PolarityNPN
SKU115984
Surface Mounted Yes/NoNO
t(f) Max. (S)23n+
t(stor) Max. (S)18n
Tr Max. (s)15n
Trans. Freq (Hz) Min.400M
Transition Frequency (f.400 MHz
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO12
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