Toshiba Semiconductor and Storage TK90S06N1L,LQ

mpnTK90S06N1L,LQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.5V, 10V
Drain to Source Voltage.	81nC @ 10V
Drive Voltage (Max Rds .	3.3mOhm @ 45A, 10V
FET Feature	157W (Tc)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	5400pF @ 10V
Mfr	Toshiba Semiconductor a.
Mounting Type	TO-252-3
Operating Temperature	Surface Mount
Package	Active
Package / Case	60V
Part Status	N-Channel
Power Dissipation (Max)	175?C (TJ)
Rds On (Max) @ Id, Vgs	2.5V @ 500?A
Series	Tape & Reel (TR)
Supplier Device Package	TO-252-3, DPak (2 Leads.
Technology	90A (Ta)
Vgs (Max)	-
Vgs(th) (Max) @ Id	?20V