Toshiba Semiconductor and Storage TPH1R306P1,L1Q

mpnTPH1R306P1,L1Q
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TPH1R306
Category	Discrete Semiconductor .
Current - Continuous Dr.	100A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	91 nC @ 10 V
Input Capacitance (Ciss.	8100 pF @ 30 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	175?C
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1.28mOhm @ 50A, 10V
Series	U-MOSIX-H
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 1mA