Attributes

Key Value
Base Product NumberIRLMS200
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.5A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .22 nC @ 5 V
Input Capacitance (Ciss.1310 pF @ 15 V
MfrInfineon Technologies
Mounting TypeSurface Mount
PackageTube
Package / CaseSOT-23-6
Power Dissipation (Max)2W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs30mOhm @ 6.5A, 4.5V
SeriesHEXFET?
Supplier Device PackageMicro6?(SOT23-6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.2V @ 250?A
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