Attributes

Key Value
Base Product NumberNTMJS1
CategoryDiscrete Semiconductor .
Current - Continuous Dr.38A (Ta), 250A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .91 nC @ 10 V
Input Capacitance (Ciss.6660 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-1205, 8-LFPAK56
Part StatusActive
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs1.36mOhm @ 50A, 10V
Series-
Supplier Device Package8-LFPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A
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