Attributes

Key Value
Base Product NumberTIS75
CategoryDiscrete Semiconductor .
Current - Drain (Idss) .8 mA @ 15 V
FET TypeN-Channel
Input Capacitance (Ciss.18pF @ 10V (VGS)
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-2.
Power - Max350 mW
Product StatusObsolete
Resistance - RDS(On)60 Ohms
Series-
Supplier Device PackageTO-92-3
Voltage - Breakdown (V(.30 V
Voltage - Cutoff (VGS o.800 mV @ 4 nA
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