Attributes

Key Value
Drain to Source Voltage.1200V (1.2kV)
FET FeatureSilicon Carbide (SiC)
FET Type2 N-Channel (Dual)
Manufacturer Part NumberBSM180D12P3C007
Mounting TypeSurface Mount
Operating Temperature175
Package / CaseModule
PackagingBulk Pack
Power - Max880W
RoHS StatusRoHS-Compliant
Series-
Supplier Device PackageModule
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