Attributes

Key Value
Base Product NumberBSM180
CategoryDiscrete Semiconductor .
Current - Continuous Dr.180A (Tc)
Drain to Source Voltage.1200V (1.2kV)
FET FeatureSilicon Carbide (SiC)
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) .-
Input Capacitance (Ciss.900pF @ 10V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature175?C (TJ)
PackageBulk
Package / CaseModule
Part StatusActive
Power - Max880W
Rds On (Max) @ Id, Vgs-
Series-
Supplier Device PackageModule
Vgs(th) (Max) @ Id5.6V @ 50mA
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