mpn
R6011END3TL1
brand
name: ROHM Semiconductor
manufacturer
name: ROHM Semiconductor
Attributes
Key
Value
Avalanche Energy Rating.
210 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN D.
Drain Current-Max (ID)
11 A
Drain-source On Resista.
390 m?
DS Breakdown Voltage-Min
600 V
FET Technology
METAL-OXIDE SEMICONDUC.
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
Manufacturer
ROHM Semiconductor
Manufacturer Part Number
R6011END3TL1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Description
SMALL OUTLINE, R-PSSO-.
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Packaging
-
Peak Reflow Temperature.
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Ma.
22 A