mpn
BSP135 E6327
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Categories
Discrete Semiconductor.
Current - Continuous Dr.
120mA (Ta)
Drain to Source Voltage.
600V
FET Feature
Depletion Mode
FET Type
N-Channel
Gate Charge (Qg) (Max) .
4.9nC @ 5V
Input Capacitance (Ciss.
146pF @ 25V
Lead Free Status / RoHS.
Contains lead / RoHS n.
Manufacturer
Infineon Technologies
Manufacturer Part Number
BSP135 E6327
Moisture Sensitivity Le.
1 (Unlimited)
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package / Case
TO-261-4, TO-261AA
Packaging
Reel
Power Dissipation (Max)
1.8W (Ta)
Rds On (Max) @ Id, Vgs
45 Ohm @ 120mA, 10V
Series
SIPMOS?
Standard Package
1,000
Supplier Device Package
PG-SOT223-4
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
1V @ 94?A