mpn
IPA50R299CP
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
12A (Tc)
Drain to Source Voltage.
500 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
31 nC @ 10 V
Input Capacitance (Ciss.
1190 pF @ 100 V
Mfr
Infineon Technologies
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Bulk
Package / Case
TO-220-3 Full Pack
Power Dissipation (Max)
104W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
299mOhm @ 6.6A, 10V
Series
CoolMOS?
Supplier Device Package
PG-TO220-3-31 Full Pack
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
3.5V @ 440?A