Attributes

Key Value
Base Product NumberSCT3120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.21A (Tc)
Drain to Source Voltage.650 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .38 nC @ 18 V
Input Capacitance (Ciss.460 pF @ 500 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-8, D?Pak (7 Lead.
Part StatusActive
Power Dissipation (Max)100W
Rds On (Max) @ Id, Vgs156mOhm @ 6.7A, 18V
Series-
Supplier Device PackageTO-263-7
TechnologySiC (Silicon Carbide Ju.
Vgs (Max)+22V, -4V
Vgs(th) (Max) @ Id5.6V @ 3.33mA
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