Attributes

Key Value
Base Product NumberIXFH50
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .116 nC @ 10 V
Input Capacitance (Ciss.4660 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Part StatusActive
Power Dissipation (Max)660W (Tc)
Rds On (Max) @ Id, Vgs73mOhm @ 25A, 10V
SeriesHiPerFET?, Ultra X
Supplier Device PackageTO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 4mA
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