Infineon Technologies BUZ31H3046XKSA1

mpnBUZ31H3046XKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	14.5A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	5V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss.	1120 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Power Dissipation (Max)	95W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	200mOhm @ 9A, 5V
Series	SIPMOS?
Supplier Device Package	PG-TO262-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 1mA

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