Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.9A (Tc)
Drain to Source Voltage.450 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .80 nC @ 10 V
Input Capacitance (Ciss.1400 pF @ 25 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Part StatusObsolete
Power Dissipation (Max)40W (Tc)
Rds On (Max) @ Id, Vgs630mOhm @ 2.9A, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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