mpn
SISH536DN-T1-GE3
brand
name: Vishay Siliconix
manufacturer
name: Vishay Siliconix
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
24.7A (Ta), 67.4A (Tc)
Drain to Source Voltage.
30 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
25 nC @ 10 V
Input Capacitance (Ciss.
1150 pF @ 15 V
Mfr
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
PowerPAK? 1212-8SH
Power Dissipation (Max)
3.57W (Ta), 26.5W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
3.25mOhm @ 10A, 10V
Series
TrenchFET? Gen V
Supplier Device Package
PowerPAK? 1212-8SH
Technology
MOSFET (Metal Oxide)
Vgs (Max)
+16V, -12V
Vgs(th) (Max) @ Id
2.2V @ 250?A