PN Junction Semiconductor P3M12160K4

mpnP3M12160K4
brandname: PN Junction Semiconductor
manufacturername: PN Junction Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	19A
Drain to Source Voltage.	1200 V
Drive Voltage (Max Rds .	15V
FET Feature	-
FET Type	N-Channel
Mfr	PN Junction Semiconduct.
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-247-4
Power Dissipation (Max)	110W
Product Status	Active
Rds On (Max) @ Id, Vgs	192mOhm @ 10A, 15V
Series	P3M
Supplier Device Package	TO-247-4L
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+21V, -8V
Vgs(th) (Max) @ Id	2.4V @ 2.5mA (Typ)

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