Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.130A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .257 nC @ 10 V
Input Capacitance (Ciss.10850 pF @ 10 V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Part StatusActive
Power Dissipation (Max)1.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs1.82mOhm @ 39A, 4.5V
Series-
Supplier Device Package8-HVSON (5.4x5.15)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-
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